5stp 21h4200 ts - tv/122/04 jul-10 1 of 5 5stp 21h4200 old part no. tv 989-2100-42 phase control thyristor properties key parameters high operational capability v drm , v rrm = 4 200 v possibility of serial and parallel connection i tavm = 2 192 a applications i tsm = 32 000 a controlled rectifiers v to = 1.249 v ac drives r t = 0.191 m w types v rrm , v drm 5stp 21h4200 5stp 21h4000 4 200 v 4 000 v conditions: t j = -40 125 c, half sine waveform, f = 50 hz, note 1 mechanical data f m mounting force 50 5 kn m weight 0.93 kg d s surface creepage distance 36 mm d a air strike distance 15 mm fig. 1 case abb s.r.o. novodvorska 1768/138a, 142 21 praha 4, czech republic tel.: +420 261 306 250, http://www.abb.com/semiconductors
5stp 21h4200 abb s.r.o., novodvorska 1768/138a, 142 21 praha 4, czech republic abb s.r.o. reserves the right to change the data contained herein at any time without notice ts - tv/122/04 jul-10 2 of 5 maximum ratings maximum limits unit v rrm v drm repetitive peak reverse and off-state voltage t j = -40 ? 125 c, note 1 5stp 21h4200 5stp 21h4000 4 200 4 000 v v rsm v dsm non-repetitive peak reverse and off-state voltage t j = 25 ? 125 c 5stp 21h4200 5stp 21h4000 4 300 4 100 v i trms rms on-state current t c = 70 c, half sine waveform, f = 50 hz 3 443 a i tavm average on-state current t c = 70 c, half sine waveform, f = 50 hz 2 192 a i tsm peak non-repetitive surge half sine pulse, v r = 0 v t p = 10 ms t p = 8.3 ms 32 000 34 200 a i 2 t limiting load integral half sine pulse, v r = 0 v t p = 10 ms t p = 8.3 ms 5 120 000 4 850 000 a 2 s (di t /dt) cr critical rate of rise of on-state current i t = i tavm , half sine waveform, f = 50 hz, v d = 2/3 v drm , t r = 0.3 s, i gt = 2 a 150 a/s (dv d /dt) cr critical rate of rise of off-state voltage v d = 2/3 v drm 1 000 v/s p gavm maximum average gate power losses 5 w i fgm peak gate current 10 a v fgm peak gate voltage 12 v v rgm reverse peak gate voltage 10 v t jmin - t jmax operating temperature range -40 125 c t stgmin - t stgmax storage temperature range -40 125 c unless otherwise specified t j = 125 c note 1: de-rating factor of 0.13% v rrm or v drm per c is applicable for t j below 25 c
5stp 21h4200 abb s.r.o., novodvorska 1768/138a, 142 21 praha 4, czech republic abb s.r.o. reserves the right to change the data contained herein at any time without notice ts - tv/122/04 jul-10 3 of 5 characteristics value unit min. typ. max. v tm maximum peak on-state voltage i tm = 4 000 a 2.030 v v t0 threshold voltage 1.249 v r t slope resistance i t1 = 3 299 a, i t2 = 9 896 a 0.191 m w i dm peak off-state current v d = v drm 200 ma i rm peak reverse current v r = v rrm 200 ma t gd delay time t j = 25 c, v d = 0.4 v drm , i tm = i tavm , t r = 0.3 s, i gt = 2 a 3 s t q turn-off time i t = 2 000 a, di t /dt = 12.5 a/s, v d = 2/3 v drm , dv d /dt = 50 v/s 700 s q rr recovery charge the same conditions as at t q 3 400 c i h holding current t j = 25 c t j = 125 c 170 90 ma i l latching current t j = 25 c t j = 125 c 1 500 1 000 ma v gt gate trigger voltage v d = 12v, i t = 4 a t j = - 40 c t j = 25 c t j = 125 c 0.25 4 3 2 v i gt gate trigger current v d = 12v, i t = 4 a t j = - 40 c t j = 25 c t j = 125 c 10 500 300 200 ma unless otherwise specified t j = 125 c thermal parameters value unit r thjc thermal resistance junction to case double side cooling 10.0 k/kw anode side cooling 16.0 cathode side cooling 26.5 r thch thermal resistance case to heatsink double side cooling 3.0 k/kw single side cooling 6.0
5stp 21h4200 abb s.r.o., novodvorska 1768/138a, 142 21 praha 4, czech republic abb s.r.o. reserves the right to change the data contained herein at any time without notice ts - tv/122/04 jul-10 4 of 5 transient thermal impedance i 1 2 3 4 5 t i ( s ) 0.4871 0.1468 0.0677 0.0079 0.0021 r i ( k/kw ) 6.73 1.44 0.65 0.84 0.32 0 2 4 6 8 10 12 0,001 0,01 0,1 1 10 square wave pulse duration t d ( s ) z t h j c ( k / k w ) analytical function for transient thermal impedance ? = t - - = 5 1 )) / exp( 1 ( i i i thjc t r z conditions: f m = 50 5 kn, double side cooled correction for periodic waveforms 180 sine: add 1.0 k/kw 180 rectangular: add 1.0 k/kw 120 rectangular: add 1.5 k/kw 60 rectangular: add 3.0 k/kw fig. 2 dependence transient thermal impedance junction to case on square pulse 0 2000 4000 6000 8000 10000 12000 14000 0 1 2 3 4 v t ( v ) i t ( a ) t j = 25c 125c 20 25 30 35 40 45 50 1 10 100 t ( ms ) i t s m ( k a ) 2 3 4 5 6 7 8 i 2 d t ( 1 0 6 a 2 s ) i tsm i 2 dt fig. 3 maximum on-state characteristics fig. 4 surge on-state current vs. pulse length, half sine wave, single pulse, v r = 0 v, t j = t jmax
5stp 21h4200 abb s.r.o., novodvorska 1768/138a, 142 21 praha 4, czech republic abb s.r.o. reserves the right to change the data contained herein at any time without notice ts - tv/122/04 jul-10 5 of 5 0 1000 2000 3000 4000 5000 6000 0 500 1000 1500 2000 2500 i tav ( a ) p t ( w ) y = 30 60 90 120 180 dc 0 1000 2000 3000 4000 5000 6000 0 500 1000 1500 2000 2500 i tav ( a ) p t ( w ) y = 30 60 90 120 180 270 dc fig. 5 on-state power loss vs. average on-state current, sine waveform, f = 50 hz, t = 1/f fig. 6 on-state power loss vs. average on-state current, square waveform, f = 50 hz, t = 1/f 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 2500 i tav ( a ) t c ( c ) 180 60 90 120 y = 30 dc 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 2500 i tav ( a ) t c ( c ) 180 dc 270 120 90 60 y = 30 fig. 7 max. case temperature vs. aver. on-state current, sine waveform, f = 50 hz, t = 1/f fig. 8 max. case temperature vs. aver. on-state current, square waveform, f = 50 hz, t = 1/f notes:
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